Pre-Production

This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to

change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made.

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document Number: 001-86211 Rev. *A

Revised May 29, 2013

FM1608B

64Kb Bytewide 5V F-RAM Memory

Features

64Kbit Ferroelectric Nonvolatile RAM

Organized as 8,192 x 8 bits

High Endurance 1 Trillion (10

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Superior to BBSRAM Modules

No Battery Concerns

Monolithic Reliability

True Surface Mount Solution, No Rework Steps

Superior for Moisture, Shock, and Vibration

Resistant to Negative Voltage Undershoots

SRAM & EEPROM Compatible

JEDEC 8Kx8 SRAM & EEPROM pinout

70 ns Access Time

130 ns Cycle Time

Low Power Operation

15 mA Active Current

25 A (typ.) Standby Current

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

28-pin “Green”/RoHS SOIC Package

Description

The FM1608B is a 64-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile but operates in other respects as a RAM.

It provides data retention for 38 years while

eliminating

the

reliability

concerns,

functional

disadvantages and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing

and high write endurance make F-RAM superior to

other types of nonvolatile memory.

In-system operation of the FM1608B is very similar

to other RAM devices. Minimum read- and write-

cycle times are equal. The F-RAM memory, however,

is nonvolatile due to its unique ferroelectric memory

process. Unlike BBSRAM, the FM1608B is a truly

monolithic nonvolatile memory. It provides the same

functional benefits of a fast write without the

disadvantages associated with modules and batteries

or hybrid memory solutions.

These capabilities make the FM1608B ideal for

nonvolatile memory applications requiring frequent

or rapid writes in a bytewide environment. The

availability of a true surface-mount package improves

the

manufacturability

of

new

designs.

Device

specifications are guaranteed over an industrial

temperature range of -40°C to +85°C.

Pin Configuration

Ordering Information

FM1608B-SG

28-pin “Green”/RoHS SOIC

NC

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6

DQ7

CE

A10

OE

A11

A9

A8

NC

WE

VDD

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15