MRF10120

2

MOTOROLA RF DEVICE DATA

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)

hFE

20

—

—

—

µs Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%)

Common–Base Amplifier Power Gain

(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz)

GPB

8.0

9.2

—

dB

Collector Efficiency

(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz)

η

50

55

—

%

Load Mismatch

(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz,

VSWR = 3:1 All Phase Angles)

ψ

No Degradation in Output Power

Figure 1. Test Circuit

Z1 – Z9 — Microstrip, See Details

Board Material — Teflon®/Glass Laminate,

Dielectric Thickness = 0.030

″,

εr = 2.55, 2 Oz. Copper

C1 — 270 pF 100 Mil Chip Capacitor

C2 — 220 pF 100 Mil Chip Capacitor

C3 — 0.1

µF

C4 — 47

µF 50 V Electrolytic

L1 — 3 Turns #18 AWG, 1/8

″ ID, 0.18 Long

RF

INPUT

RF

OUTPUT

C1

36 Vdc

+

–

D.U.T.

Z1

+

L1

Z2

Z3

Z4

Z6

Z7

Z8

Z9

Z5

C2

C3

C4

ALL DIMENSIONS IN INCHES

1.00

0.4

0.2

0.15

1.1

0.15

0.3

0.6

0.081

0.91

0.6

0.66

0.55

0.22

1.06

0.52

0.8

0.081

0.05

0.44

0.74

0.3

0.13