May 2001

©2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQB13N06 / FQI13N06

60V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as DC/DC

converters,

high

efficiency

switching

for

power

management in portable and battery operated products.

Features

• Low gate charge ( typical 5.8 nC)

• Low Crss ( typical 15 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175

°C maximum junction temperature rating

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Thermal Characteristics

Symbol

Parameter

FQB13N06 / FQI13N06

Units

Drain-Source Voltage

60

V

Drain Current

13

A

9.2

A

Drain Current

- Pulsed

(Note 1)

52

A

Gate-Source Voltage

± 25

V

Single Pulsed Avalanche Energy

(Note 2)

85

mJ

Avalanche Current

(Note 1)

13

A

Repetitive Avalanche Energy

(Note 1)

4.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

7.0

V/ns

3.75

W

45

W

- Derate above 25°C

0.3

W/°C

Operating and Storage Temperature Range

-55 to +175

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

3.35

°C/W

Thermal Resistance, Junction-to-Ambient *

--

40

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

S

D

G

FQB Series

FQI Series

G

S

D

G

S

D