2–1

MRF10500 MRF10501

MOTOROLA RF DEVICE DATA

The RF Line

Microwave Pulse

Power Transistors

. . . designed for 1025 – 1150 MHz pulse common base amplifier applications

such as TCAS, TACAN and Mode–S transmitters.

• Guaranteed Performance @ 1090 MHz

Output Power = 500 Watts Peak

Gain = 8.5 dB Min, 9.0 dB (Typ)

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Hermetically Sealed Industry Package

• Silicon Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Internal Input and Output Matching

• Characterized with 10 µs, 1% Duty Cycle Pulses

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCES

65

Vdc

Collector–Base Voltage

VCBO

65

Vdc

Emitter–Base Voltage

VEBO

3.5

Vdc

Collector Current — Peak (1)

IC

29

Adc

Total Device Dissipation @ TC = 25°C (1), (2)

Derate above 25

°C

PD

1460

8.3

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to + 200

°C

Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (3)

R

θJC

0.12

°C/W

NOTES:

1. Under pulse RF operating conditions.

2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF

amplifiers.

3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case

θJC value

measured @ 32

µs, 2%.)

Order this document

by MRF10500/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF10500

MRF10501

500 W (PEAK)

1025 – 1150 MHz

MICROWAVE POWER

TRANSISTORS

NPN SILICON

CASE 355D–02, STYLE 1

MRF10500

CASE 355H–01, STYLE 1

MRF10501

REV 6