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VNB35N07-E Datasheet(PDF) 3 Page - STMicroelectronics |
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VNB35N07-E Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 13 page  ELECTRICAL CHARACTERISTICS (continued) SWITCHING ( ∗∗) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime VDD =28 V Id =18 A Vgen =10 V Rgen =10 Ω (see f igure 3) 100 350 650 200 200 600 1000 350 ns ns ns ns td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime VDD =28 V Id =18 A Vgen =10 V Rgen = 1000 Ω (see f igure 3) 500 2.7 10 4.3 800 4.2 16 6.5 ns µs µs µs (di/ dt)on Turn-on Current Slope VDD =28 V ID =18 A Vin =10 V Rgen =10 Ω 60 A/ µs Qi Total Input Charge VDD =12 V ID =18 A Vin = 10 V 100 nC SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it VSD ( ∗)Forward On Voltage ISD =18 A Vin =0 1.6 V trr( ∗∗) Qrr( ∗∗) IRRM ( ∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18 A di/dt = 100 A/ µs VDD =30 V Tj =25 oC (see t est circuit, figure 5) 250 1 8 ns µC A PROTECTION Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it Ilim Drain Current Limit Vin =10 V VDS =13 V Vin =5 V VDS =13 V 25 25 35 35 45 45 A A tdlim( ∗∗) St ep Response Current Limit Vin =10 V Vin =5 V 35 70 60 140 µs µs Tjsh( ∗∗) Overtemperature Shutdown 150 oC Tjrs( ∗∗) Overtemperature Reset 135 oC Igf( ∗∗) Fault Sink Current Vin =10 V VDS =13 V Vin =5 V VDS =13 V 50 20 mA mA Eas( ∗∗) Single Pulse Avalanche Energy st arting Tj =25 oCVDD =20 V Vin =10 V Rgen =1 K Ω L= 10 mH 2. 5 J ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ∗∗) Parameters guaranteed by design/characterization VNP35N07FI-VNB35N07-VNV35N07 3/13 |
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