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DRV110PWR Datasheet(PDF) 5 Page - Texas Instruments |
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DRV110PWR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 16 page DRV110 www.ti.com SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 ABSOLUTE MAXIMUM RATINGS (1) (2) VALUE UNIT VIN Input voltage range –0.3 to 20 V Voltage range on EN, STATUS, PEAK, HOLD, OSC, SENSE, KEEP –0.3 to 7 V Voltage range on OUT –0.3 to 20 V HBM (human body model) 2000 ESD rating V CDM (charged device model) 500 TJ Operating virtual junction temperature range –40 to 125 °C Tstg Storage temperature range –65 to 150 °C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to network ground terminal. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT IQ Supply current 1 1.5 3 mA VIN Device will start sinking current when VIN > 15 V to limit VIN 6 15 V CIN Input capacitor between VIN and GND (1) 1 4.7 µF L Solenoid inductance 1 H TA Operating ambient temperature -40 105 °C (1) 4.7-µF input capacitor and full wave rectified 230-Vrms AC supply results in approximately 500-mV supply ripple. THERMAL INFORMATION DRV110 THERMAL METRIC PWP UNITS 8 PINS 14 PINS θJA Junction-to-ambient thermal resistance(1) 183.8 122.6 θJCtop Junction-to-case (top) thermal resistance(2) 69.2 51.2 θJB Junction-to-board thermal resistance(3) 112.6 64.3 °C/W ψJT Junction-to-top characterization parameter(4) 10.4 6.5 ψJB Junction-to-board characterization parameter(5) 110.9 63.7 θJCbot Junction-to-case (bottom) thermal resistance(6) N/A N/A (1) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. (2) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC- standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. (3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. (4) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). (5) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). (6) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer Copyright © 2012–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: DRV110 |
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