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DRV110PWR Datasheet(PDF) 5 Page - Texas Instruments

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Part # DRV110PWR
Description  POWER SAVING SOLENOID CONTROLLER WITH INTEGRATED SUPPLY REGULATION
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

DRV110PWR Datasheet(HTML) 5 Page - Texas Instruments

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DRV110
www.ti.com
SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013
ABSOLUTE MAXIMUM RATINGS
(1) (2)
VALUE
UNIT
VIN
Input voltage range
–0.3 to 20
V
Voltage range on EN, STATUS, PEAK, HOLD, OSC, SENSE, KEEP
–0.3 to 7
V
Voltage range on OUT
–0.3 to 20
V
HBM (human body model)
2000
ESD rating
V
CDM (charged device model)
500
TJ
Operating virtual junction temperature range
–40 to 125
°C
Tstg
Storage temperature range
–65 to 150
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to network ground terminal.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
IQ
Supply current
1
1.5
3
mA
VIN
Device will start sinking current when VIN > 15 V to limit VIN
6
15
V
CIN
Input capacitor between VIN and GND (1)
1
4.7
µF
L
Solenoid inductance
1
H
TA
Operating ambient temperature
-40
105
°C
(1)
4.7-µF input capacitor and full wave rectified 230-Vrms AC supply results in approximately 500-mV supply ripple.
THERMAL INFORMATION
DRV110
THERMAL METRIC
PWP
UNITS
8 PINS
14 PINS
θJA
Junction-to-ambient thermal resistance(1)
183.8
122.6
θJCtop
Junction-to-case (top) thermal resistance(2)
69.2
51.2
θJB
Junction-to-board thermal resistance(3)
112.6
64.3
°C/W
ψJT
Junction-to-top characterization parameter(4)
10.4
6.5
ψJB
Junction-to-board characterization parameter(5)
110.9
63.7
θJCbot
Junction-to-case (bottom) thermal resistance(6)
N/A
N/A
(1)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(2)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(3)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(4)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(5)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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