Features

Fully operational to +500V

Tolerant to negative transient voltage

dV/dt immune

power transistor current

shutdown time

Description

The IR2125(S) is a high voltage, high speed power

MOSFET and IGBT driver with over-current limiting

protection circuitry. Proprietary HVIC and latch im-

mune CMOS technologies enable ruggedized mono-

lithic construction. Logic inputs are compatible with

standard CMOS or LSTTL outputs, down to 2.5V

logic. The output driver features a high pulse current

CURRENT LIMITING SINGLE CHANNEL DRIVER

Product Summary

500V max.

1A / 2A

12 - 18V

230 mV

150 & 150 ns

Packages

Typical Connection

buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the

driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external

capacitor which directly controls the time interval between detection of the over-current limiting conditions and

latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high

or low side configuration which operates up to 500 volts.

V

CC

V

B

CS

HO

V

S

COM

IN

ERR

V

CC

IN

TO

LOAD

up to 500V

Data Sheet No. PD60017 Rev.Q

www.irf.com

1

(Refer to Lead Assignments

for correct pin configura-

tion). This/These diagram(s)

show electrical connections

only. Please refer to our

Application Notes and

DesignTips for proper circuit

board layout.

8-Lead PDIP

16-Lead SOIC

(Wide Body)