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CIG10F1R0MNC Datasheet(PDF) 4 Page - Samsung semiconductor |
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CIG10F1R0MNC Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 6 page 50 51 CIG 2012(0805) Type - Low RDC CIG 2012(0805) Type - Choke Frequency (MHz) 1 10 100 1000 10 1 0.1 10 1 0.1 INDUCTANCE 2.2uH 4.7 uH 3.3 uH 1.5uH 1.0uH 0.4uH DC BIAS CHARACTERISTIC 1.0 uH 1.5 uH 2.2 uH 4.7 uH 0.47 uH 3.3 uH 10 1 0 10 100 1000 10000 Current (mA) Frequency (MHz) 1 10 100 1000 10 1 0.1 10 1 0.1 INDUCTANCE DC BIAS CHARACTERISTIC 2R2 2R2 4R7 4R7 10 1 0 100 1000 10000 Current (mA) Part No. CIG21LR47MNE CIG21L1R0MNE CIG21L1R5MNE CIG21L2R2MNE CIG21L3R3MNE CIG21L4R7MNE Inductance ( μH) @1MHz DC Resistance ( Ω) Rated Current. Idc (A) △T = 40℃ 0.47 ±20 % 1.0 ±20 % 1.5 ±20 % 2.2 ±20 % 3.3 ±20 % 4.7 ±20 % 0.08 ±20 % 0.11 ±20 % 0.14 ±20 % 0.16 ±20 % 0.22 ±20 % 0.26 ±20 % 1.30 1.15 1.05 0.95 0.80 0.75 Part No. CIG21C2R2MNE CIG21C4R7MNE Inductance ( μH) @1MHz DC Resistance ( Ω) Rated Current. Idc (A) △T = 40℃ 2.2 ±20 % 4.7 ±20 % 0.25 ±20 % 0.43 ±20 % 0.77 0.58 |
Similar Part No. - CIG10F1R0MNC |
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Similar Description - CIG10F1R0MNC |
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