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NP40N10VDF-E2-AY Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # NP40N10VDF-E2-AY
Description  100 V ??40 A ??N-channel Power MOS FET Application: Automotive
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP40N10VDF-E2-AY Datasheet(HTML) 2 Page - Renesas Technology Corp

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NP40N10YDF, NP40N10VDF, NP40N10PDF
Preliminary
R07DS0361EJ0201 Rev.2.01
Page 2 of 9
May 13, 2013
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±40
A
Drain Current (pulse) ∗
1
ID(pulse)
±80
A
Total Power Dissipation (TC = 25
°C)
PT1
120
W
NP40N10YDF
Total Power Dissipation (TA = 25
°C) ∗
2
PT2
1.0
W
NP40N10VDF
Total Power Dissipation (TA = 25
°C) ∗
2
1.2
NP40N10PDF
Total Power Dissipation (TA = 25
°C)
1.8
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−55 to +175
°C
Single Avalanche Current ∗
3
IAS
25
A
Single Avalanche Energy ∗
3
EAS
61
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C)
1.25
°C/W
Channel to Ambient Thermal Resistance ∗
2
Rth(ch-A)
NP40N10YDF
150
°C/W
NP40N10VDF
125
°C/W
NP40N10PDF
83.3
°C/W
Notes: *1. TC = 25°C, PW
≤ 10 μs, Duty Cycle ≤ 1%
*2. Mounted on glass epoxy substrate of 40 mm
× 40 mm × 1.6 mmt with 4% copper area (35 μm)
*3. Tch(start) = 25
°C, VDD = 50 V, RG = 25 Ω, L = 100 μH, VGS = 20 V → 0 V


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