UPA677TB datasheet(6/8 Pages) RENESAS

Part #	UPA677TB

Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Manufacturer	RENESAS [Renesas Technology Corp]

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Data Sheet G16598EJ1V0DS

4

µµµµPA677TB

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

0

0.2

0.4

0.6

0.8

1

1.2

- 50

0

50

100

150

Pulsed

VGS = 2.5 V, ID = 0.15 A

VGS = 4.5 V, ID = 0.30 A

VGS = 4.0 V, ID = 0.30 A

0

0.2

0.4

0.6

0.8

1

1.2

0246

8

10

12

Pulsed

ID = 0.30 A

Tch - Channel Temperature -

°CVGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

0

0.2

0.4

0.6

0.8

1

1.2

0.01

0.1

1

10

VGS = 4.5 V

Pulsed

TA = 125°C

75°C

25°C

−25°C

0

0.2

0.4

0.6

0.8

1

1.2

0.01

0.1

1

10

VGS = 4.0 V

Pulsed

TA = 125°C

75°C

25°C

−25°C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

CAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

0

0.2

0.4

0.6

0.8

1

1.2

0.01

0.1

1

10

VGS = 2.5 V

Pulsed

−25°C

25°C

75°C

TA = 125°C

1

10

100

0.1

1

10

100

V GS = 0 V

f = 1.0 M H z

C iss

C oss

C rss

ID - Drain Current - A

VDS - Drain to Source Voltage - V

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