IDT5V41065

2 OUTPUT PCIE GEN1/2 SYNTHESIZER

IDT® 2 OUTPUT PCIE GEN1/2 SYNTHESIZER

7

IDT5V41065

REV E 112111

Absolute Maximum Ratings

Stresses above the ratings listed below can cause permanent damage to the IDT5V41065. These ratings are stress

ratings only. Functional operation of the device at these or any other conditions above those indicated in the

operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for

extended periods can affect product reliability. Electrical parameters are guaranteed only over the recommended

operating temperature range.

DC Electrical Characteristics

Unless stated otherwise, VDD = 3.3 V ±5%, Ambient Temperature -40 to +85

° C

1. Single edge is monotonic when transitioning through region.

2. Inputs with pull-ups/-downs are not included.

Item

Rating

Supply Voltage, VDDXD, VDDODA

4.6 V

All Inputs and Outputs

-0.5 V to VDD+0.5 V

Ambient Operating Temperature (commercial)

0 to +70

° C

Ambient Operating Temperature (industrial)

-40 to +85

° C

Storage Temperature

-65 to +150

° C

Junction Temperature

125

° C

Soldering Temperature

260

° C

ESD Protection (Input)

2000 V min. (HBM)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Units

Supply Voltage

V

3.135

3.3

3.465

V

S0, S1, OE, ICLK, SS0, SS1

2.2

VDD +0.3

V

S0, S1, OE, ICLK, SS0, SS1

VSS-0.3

0.8

V

0 < Vin < VDD

-5

5

μA

Operating Supply Current

@100 MHz

63

85

mA

OE =Low

42

50

mA

Input Capacitance

Input pin capacitance

7

pF

Output Capacitance

Output pin capacitance

6

pF

X1, X2 Capacitance

5pF

Pin Inductance

5nH

Output Impedance

CLK outputs

3.0

k

Ω

Pull-up Resistor

S0, S1, OE, SS0, SS1

100

k

Ω