ZVN4210GTA datasheet(2/3 Pages) DIODES

Part #	ZVN4210GTA

Description	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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DRAIN-SOURCE DIODE CHARACTERISTICS

PARAMETER

SYMBOL MIN.

TYP

MAX. UNIT CONDITIONS.

Diode Forward Voltage (1)

VSD

-

0.79

0.89

-

V

IS=0.32A, VGS=0V

IS=1.0A, VGS=0V

Reverse Recovery Time

(to IR=10%)

TRR

-

135

ns

IF=0.45A, VGS=0V,

IR=100mA, VR=10V

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

ZVN4210G

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