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SI826X Datasheet(PDF) 4 Page - Silicon image |
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SI826X Datasheet(HTML) 4 Page - Silicon image |
4 / 42 page Si826x 4 Preliminary Rev. 0.9 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Supply Voltage VDD 5— 30 V Input Current IF(ON) 6— 30 mA Operating Temperature (Ambient) TA –40 — 125 °C Table 2. Electrical Characteristics 1 VDD =15V or 30V, GND=0V, IF =6mA, TA = –40 to +125 °C; typical specs at 25 °C Parameter Symbol Test Conditions Min Typ Max Units DC Parameters Supply Voltage2 VDD (VDD – GND) 5 — 30 V Supply Current (Output High) IDD IF =10mA VDD =15V VDD =30V — — 1.8 2.0 2.4 2.7 mA mA Supply Current (Output Low) IDD VF = –0.3 to +1.5 V VDD =15V VDD =30V — — 1.5 1.7 2.1 2.4 mA mA Input Current Threshold IF(TH) 6— — mA Input Current Hysteresis IHYS —0.34 — mA Input Forward Voltage (OFF) VF(OFF) Measured at ANODE with respect to CATHODE. —— 1 V Input Forward Voltage (ON) VF(ON) Measured at ANODE with respect to CATHODE. 1.6 — 2.8 V Input Capacitance CI f=100kHz, VF =0V, VF =2V — — 15 15 — — pF Output Resistance High (Source)3 ROH Si826xAxx devices — 15 — Si826xBxx devices (IOH =-1A) — 2.6 5.1 Output Resistance Low (Sink)3 ROL Si826xAxx devices — 5.0 — Si826xBxx devices (IOL =2A) — 0.8 2.0 Notes: 1. See "8.Ordering Guide" on page 25 for more information. 2. Minimum value of (VDD - GND) decoupling capacitor is 1 µF. 3. Both VO pins are required to be shorted together for 4.0 A compliance. 4. When performing this test, it is recommended that the DUT be soldered to avoid trace inductances, which may cause over-stress conditions. |
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