BR25L010FJ-W datasheet(2/17 Pages) ROHM

Part #	BR25L010FJ-W

Description	Htgh speed clock action up to 5MHz(Max.), Wait function by HOLD terminal

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W

Technical Note

7~13bit *1

8bit

7~13bit *1

8bit

CS

INSTRUCTION DECODE

CONTROL CLOCK

GENERATION

INSTRUCTION

REGISTER

ADDRESS

REGISTER

ADDRESS

DECODER

1K~64K

EEPROM

STATUS REGISTER

DATA

REGISTER

READ/WRITE

AMP

VOLTAGE

DETECTION

WRITE

INHIBITION

HIGH VOLTAGE

GENERATOR

SCK

SI

HOLD

WP

SO

*1 7bit : BR25L010-W

8bit : BR25L020-W

9bit : BR25L040-W

10bit : BR25L080-W

11bit : BR25L160-W

12bit : BR25L320-W

13bit : BR25L640-W

Block diagram

-0.3 ~

+6.5

Limits

-65 ~

+125

-40 ~

+85

Terminal voltage

Impressed voltage

Storage

temperature range

Parameter

Operating

temperature range

Symbol

Unit

VCC

Tstg

Topr

–

-0.3 ~ VCC

+0.3

Permissible

dissipation

Pd

450(SOP8)

*1

450(SOP-J8)

*2

300(SSOP-B8) *3

330(TSSOP-B8) *4

310(MSOP8)

*5

310(TSSOP-B8J) *6

Number of data rewrite times

Data hold years

Parameter

1,000,000

Min.

–

Limits

Typ.

–

Max.

Times

40

––

Years

Unit

Input / output capacity (Ta=25˚C, frequency=5MHz)

Parameter

Symbol

Conditions

Min.

Max.

Unit

Input capacity

CIN

VIN=GND

–

8pF

Output capacity

COUT

VOUT=GND

–

8pF

*1

*1:Not 100% TESTED

Parameter

Symbol

Limits

Min.

Typ.

Max.

Unit

Conditions

0

–

0.4

"L" output voltage 1

IOL=2.1mA(VCC=2.5V ~ 5.5V)

VOL1

V

IOL=150

μA(VCC=1.8V ~ 2.5V)

V

0

–

0.2

"L" output voltage 2

VOL2

-1

–

1

Input leak current

VIN=0 ~ VCC

ILI

μA

VOUT=0 ~ VCC,CS=VCC

μA

-1

–

1

Output leak current

ILO

0.7x

VCC

+0.3

–

0.3x

VCC

–

"H" input voltage 1

1.8

≤VCC≤5.5V

1.8

≤VCC≤5.5V

VIH1

V

–

2

–

Standby current

VCC=5.5V

CS=HOLD=WP=VCC,SCK=SI=VCC or =GND,SO=OPEN

ISB

μA

VCC

-0.5

VCC

–

"H" output voltage 1

IOH=-0.4mA(VCC=2.5V ~ 5.5V)

VOH1

V

VCC

-0.2

VCC

–

"H" output voltage 2

Current consumption at read

action

IOH=-100

μA(VCC=1.8V ~ 2.5V)

VOH2

V

–

1.0

–

Current consumption at write

action

ICC1

mA

–

2.0

–

ICC2

mA

-0.3

"L" input voltage 1

VIL1

V

VCC=1.8V,fSCK=2MHz,tE/W=5ms

Byte write

Page write

Write status register

VCC=2.5V,fSCK=5MHz,tE/W=5ms

Byte write

Page write

Write status register

–

3.0

–

ICC3

mA

VCC=5.5V,fSCK=5MHz,tE/W=5ms

Byte write

Page write

Write status register

–

1.5

–

ICC4mA

VCC=2.5V,fSCK=5MHz

Read

Read status register

–

2.0

–

ICC5

mA

VCC=5.5V,fSCK=5MHz

Read

Read status register

V

mW

˚C

V

Recommended action conditions

Memory cell characteristics (Ta=25˚C, VCC=1.8 ~ 5.5V)

Parameter

Symbol

Limits

Unit

Power source voltage

VCC

1.8 ~ 5.5

V

Input voltage

Vin

0 ~ VCC

• Radiation resistance design is not made.

Absolute maximum ratings (Ta = 25˚C)

Electrical characteristics (Unless otherwise specified, Ta = – 40 ~ +85˚C, VCC = 1.8 ~ 5.5V)

Fig.1 Block diagram

When using at Ta = 25˚C or higher, 4.5mW (*1, *2), 3.0mW (*3),

3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1˚C

2010.07 -

Rev. B

www.rohm.com

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