VUO68-08NO7

1

10

100

1000

V

I

F

[A]

0.4

0.8

1.2

1.6

2.0

0

20

40

60

80

100

150

200

250

300

1

10

100

1000

10000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

25

50

75

100

125

150

0

5

10

15

20

25

30

0

5

10

15

20

25

30

35

40

0

25

50

75

100 125 150

0

20

40

60

80

100

I

FSM

[A]

t[s]

t[ms]

I

[A

P

tot

[W]

I

T

I

F(AV)M

[A]

T

Z

thJC

[K/W]

t[ms]

Fig. 1 Forward current versus

voltage drop per diode

Fig. 2 Surge overload current

Fig. 3 I

Fig. 4 Power dissipation vs. direct output current & ambient temperature

Fig. 5 Max. forward current vs.

case temperature

Fig. 6 Transient thermal impedance junction to case

Constants for Z

iR

t

1

0.05070

0.004

20.163

0.0025

30.2805

0.0035

40.363

0.02

5

0.2228

0.15

0.8 x V

RRM

50 Hz

T

T

T

V

R

0.6 KW

0.8 KW

1KW

2KW

4KW

8KW

DC =

1

0.5

0.4

0.33

0.17

0.08

DC =

1

0.5

0.4

0.33

0.17

0.08

T

125°C

150°C

T

T

Rectifier

IXYS reserves the right to change limits, conditions and dimensions.

20130322a

Data according to IEC 60747and per semiconductor unless otherwise specified

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