STP3NK90Z datasheet(4/20 Pages) STMICROELECTRONICS

Part #	STP3NK90Z

Description	N-channel 900 V, 4.1 廓 typ., 3 A Zener-protected SuperMESH??Power MOSFET in DPAK, TO-220 and TO-220FP packages

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Electrical characteristics

STD3NK90Z, STP3NK90Z, STP3NK90ZFP

4/20

Doc ID 9193 Rev 2

2

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

900

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 900 V

VDS = 900 V, Tj=125 °C

1

50

µA

IGSS

Gate body leakage

current (VDS = 0)

VGS = ±20 V, VDS = 0

±

10

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 50 µA

3

3.75

4.5

V

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 1.5 A

4.1

4.8

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward

transconductance

VDS =15 V, ID = 1.5 A

-

2.7

-

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

-

590

63

13

-

pF

Coss eq

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80%

Equivalent ouput

capacitance

VGS=0, VDS =0 V to 400 V

-

34

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=720 V, ID = 3 A

VGS =10 V see (Figure 18)

-

22.7

4.2

12

-

nC

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD=450 V, ID= 1.5 A,

RG=4.7 Ω, VGS=10 V

see (Figure 17)

-

18

7

-

ns

td(off)

tf

Turn-off delay time

Fall time

VDD=720 V, ID= 1.5 A,

RG=4.7 Ω, VGS=10 V

see (Figure 17)

-

45

18

-

ns

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