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IRF7351PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7351PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 11/18/09 IRF7351PbF HEXFET® Power MOSFET Notes through
are on page 10 SO-8 PD - 97436 Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems VDSS RDS(on) max Qg (typ.) 60V 17.8m Ω@VGS = 10V 24nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation f W PD @TA = 70°C Power Dissipation f Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 20 °C/W RθJA Junction-to-Ambient fg ––– 62.5 -55 to + 150 2.0 0.016 1.28 Max. 8.0 6.4 64 ± 20 60 D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 |
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