GA200SA60UP

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Vishay Semiconductors

Revision: 26-Oct-11

3

Document Number: 94364

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Typical Load Current vs. Frequency

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Maximum Collector Current vs.

Case Temperature

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

0.1

f - Frequency (kHz)

1

10

100

For both:

Duty cycle: 50 %

T

T

Gate drive as specified

Power dissipation = 140 W

Clamp voltage:

80 % of rated

Triangular wave:

I

0

40

80

120

160

200

60 % of rated

voltage

Ideal diodes

I

Square wave:

10

1000

100

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T

T

V

20 µs pulse width

10

1000

100

5.0

6.0

7.0

8.0

T

T

V

5 µs pulse width

25

50

75

100

125

150

0

50

100

150

200

1

2

3

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

V

80 µs pulse width

I

I

I