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FGH40N60UFDTU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGH40N60UFDTU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  ©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FGH40N60UFD Rev. C0 Package Marking and Ordering Information Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGH40N60UFD FGH40N60UFDTU TO-247 Tube 30ea - Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A 600 - - V BV CES T J Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250A -0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE 4.0 5.0 6.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V -1.8 2.4 V IC = 40A, VGE = 15V, TC = 125 oC -2.0 - V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -2110 - pF Coes Output Capacitance - 200 - pF Cres Reverse Transfer Capacitance - 60 - pF Switching Characteristics td(on) Turn-On Delay Time VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 25 oC -24 - ns tr Rise Time - 44 - ns td(off) Turn-Off Delay Time - 112 - ns tf Fall Time - 30 60 ns Eon Turn-On Switching Loss - 1.19 - mJ Eoff Turn-Off Switching Loss - 0.46 - mJ Ets Total Switching Loss - 1.65 - mJ td(on) Turn-On Delay Time VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 125 oC -24 - ns tr Rise Time - 45 - ns td(off) Turn-Off Delay Time - 120 - ns tf Fall Time - 40 - ns Eon Turn-On Switching Loss - 1.2 - mJ Eoff Turn-Off Switching Loss - 0.69 - mJ Ets Total Switching Loss - 1.89 - mJ Qg Total Gate Charge VCE = 400V, IC = 40A, VGE = 15V - 120 - nC Qge Gate to Emitter Charge - 14 - nC Qgc Gate to Collector Charge - 58 - nC |
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