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FQPF8P10 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQPF8P10 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Rev. B, August 2002 ©2002 Fairchild Semiconductor Corporation (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8.0mH, IAS = -5.3A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -8.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -100 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 150°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -2.65 A -- 0.41 0.53 Ω gFS Forward Transconductance VDS = -40 V, ID = -2.65 A -- 3.9 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 360 470 pF Coss Output Capacitance -- 120 155 pF Crss Reverse Transfer Capacitance -- 30 40 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -50 V, ID = -8.0 A, RG = 25 Ω -- 11 30 ns tr Turn-On Rise Time -- 110 230 ns td(off) Turn-Off Delay Time -- 20 50 ns tf Turn-Off Fall Time -- 35 80 ns Qg Total Gate Charge VDS = -80 V, ID = -8.0 A, VGS = -10 V -- 12 15 nC Qgs Gate-Source Charge -- 3.0 -- nC Qgd Gate-Drain Charge -- 6.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -5.3 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -21.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -5.3 A -- -- -4.0 V trr Reverse Recovery Time VGS = 0 V, IS = -8.0 A, dIF / dt = 100 A/µs -- 98 -- ns Qrr Reverse Recovery Charge -- 0.35 -- µC |
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