DMC2038LVT

Document number: DS35417 Rev. 4 - 2

3 of 10

www.diodes.com

September 2012

© Diodes Incorporated

DMC2038LVT

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20

-

-

V

-

-

1.0

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 7

Gate Threshold Voltage

0.4

-

1.0

V

Static Drain-Source On-Resistance

-

27

35

mΩ

-

33

43

-

43

56

Forward Transfer Admittance

-

9

-

S

Diode Forward Voltage

0.4

-

1.1

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

400

530

pF

f = 1.0MHz

Output Capacitance

-

70

90

pF

Reverse Transfer Capacitance

-

65

100

pF

Gate Resistance

-

1.9

-

Ω

-

5.7

-

nC

-

12

17

nC

Gate-Source Charge

-

0.7

-

nC

Gate-Drain Charge

-

1.4

-

nC

Turn-On Delay Time

-

5

10

ns

Turn-On Rise Time

-

8

16

ns

Turn-Off Delay Time

-

25

40

ns

Turn-Off Fall Time

-

8

16

ns

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

V

, DRAIN -SOURCE VOLTAGE(V)

Fig. 1 Typical Output Characteristics

DS

0

5

10

15

20

25

30

0

0.5

1

1.5

2

V

=10V

GS

V

=4.5V

GS

V

=4.0V

GS

V=3.5V

GS

V

=3.0V

GS

V

=2.5V

GS

V

=2.0V

GS

V

=1.5V

GS

V

, GATE SOURCE VOLTAGE(V)

Fig. 2 Typical Transfer Characteristics

GS

0

5

10

15

20

0

0.5

1

1.5

2

2.5

3

T = 150 C

A

°

T = 125 C

A

°

T = 85 C

A

°

T = 25 C

A

°

T = -55 C

A

°

V= 5.0V

DS