IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA60N20T IXTP60N20T

IXTQ60N20T

Note

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

TO-263 (IXTA) Outline

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.40

0.74

.016

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.280

.320

E

9.65

10.41

.380

.405

E1

6.22

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.13

0

.005

TO-3P (IXTQ) Outline

Pins: 1 - Gate

2 - Drain

3 - Source

TO-220 (IXTP) Outline

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

40

62

S

C

iss

4530

pF

C

oss

V

490

pF

C

rss

72

pF

t

d(on)

22

ns

t

r

13

ns

t

d(off)

33

ns

t

f

22

ns

Q

g(on)

73

nC

Q

gs

V

22

nC

Q

gd

22

nC

R

thJC

0.30 °C/W

R

thCS

TO-220

0.50

°C/W

R

thCS

TO-3P

0.25

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

60

A

I

SM

Repetitive, Pulse Width Limited by T

JM

240

A

V

SD

I

1.3

V

t

rr

118

ns

I

RM

9.3

A

Q

RM

550

nC

Resistive Switching Times

V

R

I

-di/dt = 100A/

μs

V