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FSB660A Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FSB660A Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page FSB660 / FSB660A PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted °C -55 to +150 Operating and Storage Junction Temperature Range TJ, Tstg A 2 Collector Current - Continuous IC V 5 Emitter-Base Voltage VEBO V 60 Collector-Base Voltage VCBO V 60 Collector-Emitter Voltage VCEO Units FSB660/FSB660A Parameter Symbol *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted °C/W 250 Thermal Resistance, Junction to Ambient RθJA mW 500 Total Device Dissipation PD FSB660/FSB660A Units Max Characteristic Symbol SuperSOT TM-3 (SOT-23) © 2000 Fairchild Semiconductor International FSB660/FSB660A Rev. B C E B |
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