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P0102AA-1AA3 Datasheet(PDF) 2 Page - STMicroelectronics

Part # P0102AA-1AA3
Description  Sensitive standard SCRs up to 0.8 A
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

P0102AA-1AA3 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
P010xx
2/11
1
Characteristics
Table 2.
Absolute ratings (limiting values) P010xxA and P010xxN
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (180° conduction angle)
TO-92
Tl = 55 °C
0.8
A
SOT-223
Tamb = 70 °C
IT(AV)
Average on-state current (180° conduction angle)
TO-92
Tl = 55 °C
0.5
A
SOT-223
Tamb = 70 °C
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25 °C
8
A
tp = 10 ms
7
I²tI²t Value for fusing
tp = 10 ms
Tj = 25 °C
0.24
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
1
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
0.1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 3.
Absolute ratings (limiting values) P010xxL
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (180° conduction angle)
Tamb = 36 °C
0.25
A
IT(AV)
Average on-state current (180° conduction angle)
Tamb = 36 °C
0.16
A
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25 °C
7
A
tp = 10 ms
6
I²tI²t Value for fusing
tp = 10 ms
Tj = 25 °C
0.18
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
0.5
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
0.02
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C


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