EMX4 / UMX4N / IMX4

Transistors

Rev.C

1/3

High transition frequency (dual transistors)

EMX4 / UMX4N / IMX4

Features

1) Two 2SC3837K chips in a EMT or UMT or SMT package.

3) Low output capacitance. (Cob=0.9pF)

Equivalent circuits

EMX4 / UMX4N

(3)

(2)

(1)

(4)

(5)

(6)

IMX4

(4)

(5)

(6)

(3)

(2)

(1)

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

Pc

Tj

Tstg

Limits

30

20

3

50

300(TOTAL)

150(TOTAL)

EMX4 / UMX4N

IMX4

150

−55 to +150

Unit

V

V

V

mA

mW

°C

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

∗1

∗2

Package, marking, and packaging specifications

Type

EMX4

EMT6

X4

T2R

8000

IMX4

SMT6

X4

T108

3000

UMX4N

UMT6

X4

TR

3000

Package

Marking

Code

Basic ordering unit (pieces)

Dimensions (Unit : mm)

UMX4N

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

IMX4

Each lead has same dimensions

ROHM : SMT6

EIAJ : SC-74

Each lead has same dimensions

ROHM : EMT6

EMX4

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Transition frequency

30

20

3

−

−

56

−

−

−

−

−

−

−

−

−

−

−

−

0.5

0.5

180

0.5

1.6

V

V

V

µA

µA

−

V

MHz

∗

Cob

600

1500

0.95

−

pF

=10µA

=1mA

=10µA

=15V

=2V

=10V/ −10mA, f=200MHz

=20mA/4mA

=10V/10mA

∗Transition frequency of the device.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

−

13

rbb' Cc

6

ps

Collector-base time constant

−

−

NF

4.5

dB

Noise factor

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.