3

Std.

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

f = 2.4 GHz

dBm

20.5

22.4

0.75

PAE

f = 2.4 GHz

%

25

37

2.5

mA

152

200

12.4

Gain

Small Signal Gain

f = 0.9 GHz

dB

20

f = 1.5 GHz

22

f = 2.0 GHz

23

f = 2.4 GHz

22

f = 4.0 GHz

22

f = 5.0 GHz

19

f = 6.0 GHz

17

Saturated Output Power

f = 0.9 GHz

dBm

20.9

f = 1.5 GHz

21.7

f = 2.0 GHz

21.8

f = 2.4 GHz

22

f = 4.0 GHz

21.9

f = 5.0 GHz

19.7

f = 6.0 GHz

18.2

PAE

Power Added Efficiency

f = 0.9 GHz

%

41

f = 1.5 GHz

41

f = 2.0 GHz

40

f = 2.4 GHz

37

f = 4.0 GHz

32

f = 5.0 GHz

18

f = 6.0 GHz

14

dBm

19.1

f = 1.5 GHz

19.7

f = 2.0 GHz

19.7

f = 2.4 GHz

19.2

f = 4.0 GHz

18.1

f = 5.0 GHz

16

f = 6.0 GHz

15

Input VSWR into 50 Ω

Circuit A

f = 0.9 to 1.7 GHz

3.5

f = 1.8 to 3.0 GHz

2.6

Circuit B

f = 3.0 to 6.0 GHz

2.3

Output VSWR into 50 Ω

Circuit A

f = 0.9 to 2.0 GHz

1.4

f = 2.0 to 3.0 GHz

2.5

Circuit B

f = 3.0 to 4.0 GHz

3.5

f = 4.0 to 6.0 GHz

4.5

ISOL

Isolation

f = 0.9 to 3.0 GHz

dB

-38

f = 3.0 to 6.0 GHz

-30

Third Order Intercept Point

f = 0.9 GHz to 6.0 GHz

dBm

29

Notes:

3. Measured using the final test circuit of Figure 1 with an input power of +4 dBm.

4. Standard Deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characteriza-

tion of this product, and is intended to be used as an estimate for distribution of the typical specification.

5. For linear operation, refer to thermal sections in the Applications section of this data sheet.