AT-41435G datasheet(2/5 Pages) AVAGO

Part #	AT-41435G

Description	Up to 6 GHz Low Noise Silicon Bipolar Transistor

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Manufacturer	AVAGO [AVAGO TECHNOLOGIES LIMITED]

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AT-41435 Absolute Maximum Ratings

Absolute

Symbol

Parameter

Units

Maximum[1]

VEBO

Emitter-Base Voltage

V

1.5

VCBO

Collector-Base Voltage

V

20

VCEO

Collector-Emitter Voltage

V

12

IC

Collector Current

mA

60

PT

Power Dissipation[2,3]

mW

500

Tj

Junction Temperature

°C

150

TSTG

Storage Temperature[4]

°C

-65 to 150

Thermal Resistance[2,5]:

θjc = 200°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

case = 25°C.

3. Derate at 5 mW/°C for T

c > 100°C.

4. Storage above +150°C may tarnish the leads of this package making it difficult to

solder into a circuit.

5. The small spot size of this technique results in a higher, though more accurate

determination of θjc than do alternate methods. See MEASUREMENTS section

“Thermal Resistance” for more information.

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

|S21E|2

Insertion Power Gain; VCE = 8 V, IC = 25 mA

f = 2.0 GHz

dB

11.5

f = 4.0 GHz

6.0

P1 dB

Power Output @ 1 dB Gain Compression

f = 2.0 GHz

dBm

19.0

VCE = 8 V, IC = 25 mA

f = 4.0 GHz

18.5

G1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 25 mA

f = 2.0 GHz

dB

14.0

f = 4.0 GHz

9.5

NFO

Optimum Noise Figure: VCE = 8 V, IC = 10 mA

f = 1.0 GHz

dB

1.3

f = 2.0 GHz

1.7

2.0

f = 4.0 GHz

3.0

GA

Gain @ NFO; VCE = 8 V, IC = 10 mA

f = 1.0 GHz

dB

18.5

f = 2.0 GHz

13.0

14.0

f = 4.0 GHz

10.0

fT

Gain Bandwidth Product: VCE = 8 V, IC = 25 mA

GHz

8.0

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA

—

30

150

270

ICBO

Collector Cutoff Current; VCB = 8 V

µA

0.2

IEBO

Emitter Cutoff Current; VEB = 1 V

µA

1.0

CCB

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

pF

0.2

Note:

1. For this test, the emitter is grounded.

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