1

MRF316

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

RF Power Transistor

. . . designed primarily for wideband large–signal output amplifier stages in the

30 – 200 MHz frequency range.

• Guaranteed Performance at 150 MHz, 28 Vdc

Output Power = 80 Watts

Minimum Gain = 10 dB

• Built–In Matching Network for Broadband Operation

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

• Gold Metallization System for High Reliability Applications

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

35

Vdc

Collector–Base Voltage

VCBO

65

Vdc

Emitter–Base Voltage

VEBO

4.0

Vdc

Collector Current — Continuous

IC

9.0

13.5

Adc

Total Device Dissipation @ TC = 25°C (1)

Derate above 25

°C

PD

220

1.26

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.8

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, IB = 0)

V(BR)CEO

35

—

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

V(BR)CES

65

—

—

Vdc

Collector–Base Breakdown Voltage

(IC = 50 mAdc, IE = 0)

V(BR)CBO

65

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

V(BR)EBO

4.0

—

—

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

ICBO

—

—

5.0

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 4.0 Adc, VCE = 5.0 Vdc)

hFE

10

—

80

—

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

100

130

pF

NOTE:

(continued)

1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

Order this document

by MRF316/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF316

80 W, 3.0 – 200 MHz

CONTROLLED “Q”

BROADBAND RF POWER

TRANSISTOR

NPN SILICON

CASE 316–01, STYLE 1

REV 7