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FQN1N50C Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQN1N50C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  1 D G S Absolute Maximum Ratings Symbol Parameter FQN1N50C Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 0.38 A - Continuous (TC = 100°C) 0.24 A IDM Drain Current - Pulsed (Note 1) 3.04 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 44.4 mJ IAR Avalanche Current (Note 1) 0.38 A EAR Repetitive Avalanche Energy (Note 1) 0.21 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C) 0.89 W Power Dissipation (TL = 25°C) 2.08 W - Derate above 25°C 0.017 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Thermal Characteristics Symbol Parameter Typ Max Unit RθJL Thermal Resistance, Junction-to-Lead (Note 6a) -- 60 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 6b) -- 140 °C/W March 2013 FQN1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A • Low Gate Charge (Typ. 4.9 nC) • Low Crss (Typ. 4.1 pF) • 100% Avalanche Tested www.fairchildsemi.com ©20 01 Fairchild Semiconductor Corporation FQN1N50C Rev. C0 G D S TO-92 FQN Series |
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