3

Table 1b. Performance table at low voltage operation (Vdd = Vsd 1.8V, Idd = 4mA, R2 = 3.9 kOhm)

Symbol

Parameter and Test Condition

Units

Typ.

G

Gain

dB

16.1

NF

Noise Figure

dB

1.05

IP1dB

Input 1dB Compressed Power

dBm

-8.5

Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)

dBm

0

S11

Input Return Loss

dB

-7.2

S22

Output Return Loss

dB

-14.5

S12

Reverse Isolation

dB

-28

Cell Band Rejection

Relative to 1.575GHz @ 827.5MHz

dBc

68

PCS Band Rejection

Relative to 1.575GHz @ 1885MHz

dBc

67

Input 1dB gain compression interferer signal level at 1885MHz

dBm

-5.0

Input 1dB gain compression interferer signal level at 890MHz

dBm

0

Idd

Supply DC current at Shutdown (SD) voltage Vsd=1.8V

mA

4

Ish

Shutdown Current @ VSD = 0V

uA

0.5

Notes:

7. Measurements at 1.575GHz obtained using demo board described in Figures 6 and 7

Circuit Symbol

Size

Description

L1

0402

22 nH Inductor (Taiyo Yuden HK100522NJ-T)

L2

0402

2.2 nH Inductor (Taiyo Yuden AQ1052N2S-T)

L3

0402

9.1 nH Inductor (Taiyo Yuden AQ1059N1J-T)

C1

0402

0.1 uF Capacitor (Murata GRM155F51C104ZA01E)

C2

0402

47 pF Capacitor (Murata GRM1555C1H470JZ01D)

C3

0402

330 pF Capacitor (Murata GRM1555C1H331JA01D)

R1

0402

10 Ohms Resistor (KOA RK73B1ETTB100J )

R2

0402

3.9 kOhm Resistor (KOA RK73B1ETTB392J)

Figure 1. Demoboard and application circuit components table

Pins pointing

out of the page

1

2

3

4

Pins 1, 4 = GND

Pin 2

= Vdd Supply

Pin 3

= Shutdown (SD)

DC Pin Configuration of 4-pin connector