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H11AV1-M Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # H11AV1-M
Description  PHOTOTRANSISTOR OPTOCOUPLERS
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

H11AV1-M Datasheet(HTML) 3 Page - Fairchild Semiconductor

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6/30/03
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© 2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
Note
* Typical values at TA = 25°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Min
Typ*
Max
Unit
EMITTER
Input Forward Voltage (IF = 10 mA)
TA = 25°C
VF
0.8
1.18
1.5
V
TA = -55°C
0.9
1.28
1.7
TA = 100°C
0.7
1.05
1.4
Reverse Leakage Current
(VR = 6.0 V)
IR
10
µA
DETECTOR
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IF = 0)
BVCEO
70
100
V
Collector-Base Breakdown Voltage
(IC = 100 µA, IF = 0)
BVCBO
70
120
V
Emitter-Collector Breakdown Voltage
(IE = 100 µA, IF = 0)
BVECO
710
V
Collector-Emitter Dark Current
(VCE = 10 V, IF = 0)
ICEO
1
50
nA
Collector-Base Dark Current
(VCB = 10 V)
ICBO
0.5
nA
Capacitance
(VCE = 0 V, f = 1 MHz)
CCE
8pF
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Min
Typ*
Max
Units
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 sec)
VISO
7500
Vac(pk)
Isolation Resistance
(VI-O = 500 VDC)
RISO
1011
Ω
Isolation Capacitance
(VI-O = 0 V, f = 1 MHz)
CISO
0.2
2
pF


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