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FDD5N60NZTM Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDD5N60NZTM Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2011 Fairchild Semiconductor Corporation FDD5N60NZ Rev. C0 www.fairchildsemi.com 3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 2468 10 0.1 1 10 20 -55 o C 150 o C *Notes: 1. VDS = 20V 2. 250s Pulse Test 25 o C VGS, Gate-Source Voltage[V] 0.1 1 10 20 0.1 1 10 *Notes: 1. 250s Pulse Test 2. TC = 25 o C VDS, Drain-Source Voltage[V] VGS = 12.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 02 46 8 1.5 2.0 2.5 3.0 3.5 *Note: TC = 25 o C VGS = 20V VGS = 10V ID, Drain Current [A] 0.20.4 0.60.8 1.01.2 0.1 1 10 30 *Notes: 1. V GS = 0V 2. 250s Pulse Test 150 o C V SD , Body Diode Forward Voltage [V] 25 o C 0.1 1 10 30 3 10 100 1000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Crss VDS, Drain-Source Voltage [V] 024 68 10 0 2 4 6 8 10 *Note: ID = 4A VDS = 120V VDS = 300V VDS = 480V Qg, Total Gate Charge [nC] |
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