FDD5N60NZTM datasheet(3/8 Pages) FAIRCHILD

Part #	FDD5N60NZTM

Description	N-Channel UniFET II MOSFET 600 V, 4.0 A, 2 Ohm

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDD5N60NZ Rev. C0

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3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2468

10

0.1

1

10

20

-55

o

C

150

o

C

*Notes:

1. VDS = 20V

2. 250s Pulse Test

25

o

C

VGS, Gate-Source Voltage[V]

0.1

1

10

20

0.1

1

10

*Notes:

1. 250s Pulse Test

2. TC = 25

o

C

VDS, Drain-Source Voltage[V]

VGS = 12.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

02

46

8

1.5

2.0

2.5

3.0

3.5

*Note: TC = 25

o

C

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.20.4

0.60.8

1.01.2

0.1

1

10

30

*Notes:

1. V

GS = 0V

2. 250s Pulse Test

150

o

C

V

SD

, Body Diode Forward Voltage [V]

25

o

C

0.1

1

10

30

3

10

100

1000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

024

68

10

0

2

4

6

8

10

*Note: ID = 4A

VDS = 120V

VDS = 300V

VDS = 480V

Qg, Total Gate Charge [nC]

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