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KBU8J-E4-51 Datasheet(PDF) 3 Page - Vishay Siliconix |
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KBU8J-E4-51 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 4 page KBU8A thru KBU8M Vishay General Semiconductor Document Number: 88658 Revision: 15-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Leakage Characteristics Per Diode 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.1 1 10 100 T J = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Instantaneous Forward Voltage (V) 0 20 40 60 80 100 0.01 0.1 1 10 100 T J = 100 °C T J = 25 °C Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Junction Capacitance Per Diode 1 10 100 10 100 1000 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.160 (4.1) 0.065 (1.7) 0.185 (4.7) 0.895 (22.7) 0.935 (23.7) 0.140 (3.6) 0.165 (4.2) 0.085(2.2) 0.240 (6.09) 0.200 (5.08) 0.220 (5.6) 0.180 (4.6) 0.075 (1.9) R TYP. (2 Places) 45° 0.205 (5.2) 0.185 (4.7) 0.052 (1.3) 0.048 (1.2) 0.280 (7.1) 0.260 (6.6) DIA. 0.760 (19.3) MAX. 0.700 (17.8) 0.660 (16.8) 1.0 (25.4) MIN. 0.455 (11.3) 0.405 (10.3) Case Style KBU |
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