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AUIRF3415 Datasheet(PDF) 2 Page - International Rectifier |
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AUIRF3415 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  AUIRF3415 2 www.irf.com S D G S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 2.4mH RG = 25Ω, IAS = 22A. (See Figure 12) ISD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.042 Ω VGS(th) Gate Threshold Voltage2.0 ––– 4.0 V gfs Forward Transconductance 19 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 25 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– ––– 200 Qgs Gate-to-Source Charge ––– ––– 17 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 98 td(on) Turn-On Delay Time ––– 12 ––– tr Rise Time ––– 55 ––– td(off) Turn-Off Delay Time ––– 71 ––– ns tf Fall Time ––– 69 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2400 ––– Coss Output Capacitance ––– 640 ––– pF Crss Reverse Transfer Capacitance ––– 340 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 43 (Body Diode) A ISM Pulsed Source Current ––– ––– 150 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 260 390 ns Qrr Reverse Recovery Charge ––– 2.2 3.3 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VDS = 50V, ID = 22A ID = 22A VDS = 120V VGS = 20V VGS = -20V VGS = 10V, See Fig. 6 & 13 f ID = 22A RG = 2.5 Ω TJ = 25°C, IS = 22A, VGS = 0V f showing the integral reverse p-n junction diode. Conditions RD = 3.3 Ω, See Fig. 10 VGS = 0V di/dt = 100A/µs f Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 22A f VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 150°C MOSFET symbol VDD = 75V VDS = 25V ƒ = 1.0MHz, See Fig. 5 TJ = 25°C, IF = 22A |
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