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HGT1S3N60A4DS Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # HGT1S3N60A4DS
Description  600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HGT1S3N60A4DS Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 125
oC,
ICE = 3A,
VCE = 390V, VGE = 15V,
RG = 50Ω,
L = 1mH,
Test Circuit (Figure 24)
-
5.5
8
ns
Current Rise Time
trI
-12
15
ns
Current Turn-Off Delay Time
td(OFF)I
-
110
165
ns
Current Fall Time
tfI
-
70
100
ns
Turn-On Energy (Note 2)
EON1
-37
-
µJ
Turn-On Energy (Note 2)
EON2
-
90
100
µJ
Turn-Off Energy (Note 3)
EOFF
-50
80
µJ
Diode Forward Voltage
VEC
IEC = 3A
-
2.25
-
V
Diode Reverse Recovery Time
trr
IEC = 3A, dIEC/dt = 200A/µs
-
29
-
ns
IEC = 1A, dIEC/dt = 200A/µs
-
19
-
ns
Thermal Resistance Junction To Case
RθJC
IGBT
-
-
1.8
oC/W
Diode
-
-
3.5
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
TC, CASE TEMPERATURE (
oC)
50
4
0
16
8
12
25
75
100
125
150
20
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
12
0
4
300
400
200
100
500
600
0
16
20
8
TJ = 150
oC, R
G = 50Ω, VGE = 15V, L = 200µH
HGT1S3N60A4DS, HGTP3N60A4D


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