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HGTD1N120BNS Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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HGTD1N120BNS Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 8 page  ©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25 oC ICE = 1.0A VCE = 960V VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 18) -15 20 ns Current Rise Time trI -11 14 ns Current Turn-Off Delay Time td(OFF)I -67 76 ns Current Fall Time tfI - 226 300 ns Turn-On Energy (Note 5) EON1 -70 - µJ Turn-On Energy (Note 5) EON2 - 172 187 µJ Turn-Off Energy (Note 4) EOFF - 90 123 µJ Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150 oC ICE = 1.0 A VCE = 960V VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 18) -13 17 ns Current Rise Time trI -11 15 ns Current Turn-Off Delay Time td(OFF)I -75 88 ns Current Fall Time tfI - 258 370 ns Turn-On Energy (Note 5) EON1 - 145 - µJ Turn-On Energy (Note 5) EON2 - 385 440 µJ Turn-Off Energy (Note 4) EOFF - 120 175 µJ Thermal Resistance Junction To Case RθJC - - 2.1 oC/W NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. Typical Performance Curves (Unless Otherwise Specified) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS TC, CASE TEMPERATURE ( oC) 50 0 4 5 1 25 75 100 125 150 3 2 6 VGE = 15V VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1400 3 0 1 2 600 800 400 200 1000 1200 0 4 6 5 7 TJ = 150 oC, R G = 82Ω, VGE = 15V, L = 2mH HGTD1N120BNS, HGTP1N120BN |
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