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H11A617DS Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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H11A617DS Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page PACKAGE 4/24/03 Page 1 of 9 © 2003 Fairchild Semiconductor Corporation 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC H11A617 & H11A817 SCHEMATIC DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES • Compact 4-pin package • Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: 50-600% H11AA814A: 50-150% H11A817A: 80-160% H11A617A: 40%-80% H11A817B: 130-260% H11A617B: 63%-125% H11A817C: 200-400% H11A617C: 100%-200% H11A817D: 300-600% H11A617D: 160%-320% • Minimum BVCEO of 70V guaranteed APPLICATIONS H11AA814 Series •AC line monitor • Unknown polarity DC sensor •Telephone line interface H11A617 and H11A817 Series •Power supply regulators • Digital logic inputs • Microprocessor inputs 4 1 1 2 4 3 EMITTER COLLECTOR 1 2 4 3EMITTER COLLECTOR ANODE CATHODE |
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