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HGT1S3N60A4DS9A Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # HGT1S3N60A4DS9A
Description  600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HGT1S3N60A4DS9A Datasheet(HTML) 5 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
12
16
2
1
3456
8
4
TJ = 25
oC, T
J = 125
oC, V
GE = 15V
RG = 50Ω, L = 1mH, VCE = 390V
TJ = 25
oC, T
J = 125
oC, V
GE = 12V
ICE, COLLECTOR TO EMITTER CURRENT (A)
4
8
20
16
12
24
32
28
3
2
456
1
TJ = 25
oC OR T
J = 125
oC, V
GE = 15V
RG = 50Ω, L = 1mH, VCE = 390V
TJ = 25
oC OR T
J = 125
oC, V
GE = 12V
64
48
56
ICE, COLLECTOR TO EMITTER CURRENT (A)
112
80
96
72
2
13
4
5
6
88
104
RG = 50Ω, L = 1mH, VCE = 390V
VGE = 12V, TJ = 25
oC
VGE = 15V, TJ = 25
oC
VGE = 15V, TJ = 125
oC
VGE = 12V, TJ = 125
oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
48
40
64
80
56
72
88
96
2
13
4
5
6
TJ = 125
oC, V
GE = 12V OR 15V
TJ = 25
oC, V
GE = 12V OR 15V
RG = 50Ω, L = 1mH, VCE = 390V
0
8
12
46
8
10
14
VGE, GATE TO EMITTER VOLTAGE (V)
12
16
20
4
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%, VCE = 10V
TJ = 125
oC
TJ = -55
oC
TJ = 25
oC
QG, GATE CHARGE (nC)
2
14
0
4
10
6
8
12
16
4
8
12
16
24
20
28
0
VCE = 600V
VCE = 400V
VCE = 200V
IG(REF) = 1mA, RL = 100Ω, TJ = 25
oC
HGT1S3N60A4DS, HGTP3N60A4D


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