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HGTP7N60A4 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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HGTP7N60A4 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V Collector Current Continuous At TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25 34 A At TC = 110 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110 14 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 56 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150 oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 35A at 600V Single Pulse Avalanche Energy at TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E AS 25mJ at 7A Power Dissipation Total at TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D 125 W Power Dissipation Derating TC > 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = -10mA, VGE = 0V 20 - - V Collector to Emitter Leakage Current ICES VCE = 600V TJ = 25 oC - - 250 µA TJ = 125 oC- - 2 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = 7A, VGE = 15V TJ = 25 oC- 1.9 2.7 V TJ = 125 oC- 1.6 2.2 V Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = 600V 4.5 5.9 7.0 V Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA Switching SOA SSOA TJ = 150 oC, R G = 25Ω, VGE = 15V L = 100 µH, VCE = 600V 35 - - A Pulsed Avalanche Energy EAS ICE = 7A, L = 500µH25 - - mJ Gate to Emitter Plateau Voltage VGEP IC = 7A, VCE = 300V - 9.0 - V On-State Gate Charge Qg(ON) IC = 7A, VCE = 300V VGE = 15V - 37 45 nC VGE = 20V - 48 60 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25 oC ICE = 7A VCE = 390V VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 20) -11 - ns Current Rise Time trI -11 - ns Current Turn-Off Delay Time td(OFF)I - 100 - ns Current Fall Time tfI -45 - ns Turn-On Energy (Note 2) EON1 -55 - µJ Turn-On Energy (Note 2) EON2 - 120 150 µJ Turn-Off Energy (Note 3) EOFF -60 75 µJ HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 |
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