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HGT1S2N120CNS Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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HGT1S2N120CNS Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page 3 www.fairchildsemi.com HGTP2N120CN, HGT1S2N120CN Rev. C Electrical Characteristics T C = 25°C unless otherwise noted (Continued) Notes: 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Symbol Parameter Test Conditions Min. Typ. Max. Units td(ON)l Current Trun-On Delay Time IGBT and Diode at TJ = 25°C ICE = 2.6A VCE = 960V VGE = 15V RG = 51Ω L = 5mH Test Circuit (Figure 18) -25 30ns trl Current Rise Time - 11 15 ns td(OFF)l Curent Turn-Off Delay Time - 205 220 ns tfl Current Fall Time - 260 320 ns EON1 Turn-On Energy (Note 4) - 96 - µJ EON2 Turn-On Energy (Note 4) - 425 590 µJ EOFF Turn-Off Energy (Note 5) - 355 390 µJ td(ON)l Curent Turn-On Delay Time IGBT and Diode at TJ = 150°C ICE = 2.6A VCE = 960V VGE = 15V RG = 51Ω L = 5mH Test Circuit (Figure 18) -21 25ns trl Current Rise Time - 11 15 ns td(OFF)l Curent Turn-Off Delay Time - 225 240 ns tfl Current Fall Time - 360 420 ns EON1 Turn-On Energy (Note 4) - 96 - µJ EON2 Turn-On Energy (Note 4) - 800 1100 µJ EOFF Turn-Off Energy (Note 5) - 530 580 µJ RθJC Thermal Resistance Junction to Case - - 1.20 °C/W |
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