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HGTG12N60B3 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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HGTG12N60B3 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 8 page  ©2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150 oC ICE = 12A VCE = 480V VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 17) -22 - ns Current Rise Time trI -23 - ns Current Turn-Off Delay Time td(OFF)I - 280 295 ns Current Fall Time tfI - 112 175 ns Turn-On Energy (Note 4) EON1 - 165 - µJ Turn-On Energy (Note 4) EON2 - 500 525 µJ Turn-Off Energy (Note 3) EOFF - 660 800 µJ Thermal Resistance Junction To Case RθJC -- 1.2 oC/W NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Typical Performance Curves Unless Otherwise Specified FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS TC, CASE TEMPERATURE ( oC) 50 5 0 20 10 15 25 30 VGE = 15V 25 75 100 125 150 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 50 700 30 0 10 20 300 400 200 100 500 600 40 0 60 70 80 90 100 TJ = 150 oC, R G = 25Ω, VGE = 15V, L = 100µH HGTG12N60B3 |
Similar Part No. - HGTG12N60B3 |
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Similar Description - HGTG12N60B3 |
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