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JANTXV2N6766 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # JANTXV2N6766
Description  N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
Download  9 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

JANTXV2N6766 Datasheet(HTML) 2 Page - Microsemi Corporation

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T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 2 of 9
2N6764, 2N6766, 2N6768 and 2N6770
NOTES:
1.
Derate linearly by 1.2 W/ºC for T C > +25 ºC.
2.
The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires and may also be limited by
pin diameter:
3.
IDM = 4 x ID1 as calculated in note 2.
MECHANICAL and PACKAGING
• CASE: TO-3 metal can.
• TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on
commercial grade only.
• MARKING: Manufacturer's ID, part number, date code.
• WEIGHT: Approximately 12.7 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N6764
(e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc


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