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JANTX2N918 Datasheet(PDF) 1 Page - Microsemi Corporation |
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JANTX2N918 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 4 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/301 T4-LDS-0010 Rev. 3 (101342) Page 1 of 4 DEVICES LEVELS 2N918 2N918UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current IC 50 mAdc Total Power Dissipation @ T A = +25°C (1) PT 200 mW Operating & Storage Junction Temperature Range Top & Tstg -65 to +200 °C Note: 1) Derate linearly 1.14mW/°C above TA > 25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 3mAdc V(BR)CEO 15 Vdc Collector-Base Cutoff Current VCB = 30Vdc VCB = 25Vdc VCB = 25Vdc; TA = +150°C ICBO 1.0 10 1.0 µAdc ηAdc µAdc Emitter-Base Cutoff Current VEB = 3.0Vdc VEB = 2.5Vdc IEBO 10 10 µAdc ηAdc Forward-Current Transfer Ratio IC = 0.5mAdc, VCE = 10Vdc IC = 3.0mAdc, VCE = 1.0Vdc IC = 10mAdc, VCE = 10Vdc IC = 3.0mAdc, VCE = 1.0Vdc; TA = -55°C hFE 10 20 20 10 200 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc VCE(sat) 0.4 Vdc Base-Emitter Voltage IC = 10mAdc, IB = 1.0mAdc VBE(sat) 1.0 Vdc TO-72 2N918 3 PIN 2N918UB |
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