HGTP20N60C3 datasheet(2/8 Pages) FAIRCHILD

Part #	HGTP20N60C3

Description	45A, 600V, UFS Series N-Channel IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

ALL TYPES

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES

600

V

Collector Current Continuous

At TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

45

A

At TC = 110

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C110

20

A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

300

A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

±20

V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM

±30

V

Switching Safe Operating Area at TJ = 150

oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

20A at 600V

Power Dissipation Total at TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

164

W

Power Dissipation Derating TC > 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.32

W/oC

Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV

100

mJ

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC

4

µs

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC

10

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. VCE(PK) = 360V, TJ = 125

oC, R

G = 10Ω.

Electrical Specifications

TC = 25

oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

600

-

V

Emitter to Collector Breakdown Voltage

BVECS

IC = 10mA, VGE = 0V

15

28

-

V

Collector to Emitter Leakage Current

ICES

VCE = BVCES

TC = 25

oC

-

250

µA

TC = 150

oC-

-

5.0

mA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = IC110

VGE = 15V

TC = 25

oC-

1.4

1.8

V

TC = 150

oC-

1.5

1.9

V

Gate to Emitter Threshold Voltage

VGE(TH)

IC = 250µA, VCE = VGE

3.4

4.8

6.3

V

Gate to Emitter Leakage Current

IGES

VGE = ±20V

-

±250

nA

Switching SOA

SSOA

TJ = 150

oC, R

G =

10

Ω, VGE = 15V,

L = 100

µH

VCE = 480V

120

-

A

VCE = 600V

20

-

A

Gate to Emitter Plateau Voltage

VGEP

ICE = IC110, VCE = 0.5 BVCES

-8.4

-

V

On-State Gate Charge

QG(ON)

ICE = IC110

VCE = 0.5 BVCES

VGE = 15V

-

91

110

nC

VGE = 20V

-

122

145

nC

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 25

oC

ICE = IC110

VCE = 0.8 BVCES

VGE = 15V

RG = 10Ω

L = 1mH

Test Circuit (Figure 17)

-28

32

ns

Current Rise Time

trI

-24

28

ns

Current Turn-Off Delay Time

td(OFF)I

-

151

210

ns

Current Fall Time

tfI

-55

98

ns

Turn-On Energy (Note 4)

EON1

-

295

320

µJ

Turn-On Energy (Note 4)

EON2

-

500

550

µJ

Turn-Off Energy (Note 3)

EOFF

-

500

700

µJ

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

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