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JANTXV2N5665 Datasheet(PDF) 1 Page - Microsemi Corporation |
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JANTXV2N5665 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 T4-LDS-0062 Rev. 1 (081095) Page 1 of 3 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN 2N5665 2N5666S 2N5667S JANTX 2N5666U3 JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N5664 2N5666, S 2N5665 2N5667, S Unit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 250 400 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 1.0 Adc Collector Current IC 5.0 Adc 2N5664 2N5665 2N5666, S 2N5667, S 2N5666U3 Total 1/ Power Dissipation @ TA = +25°C @ TC = +100°C PT 2.5 30 1.2 15 1.5 35 W Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C Note: 1) Consult 19500/455 for thermal derating curves. ELECTRICAL CHARACTERISTICS (TC = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N5664, 2N5666 2N5665, 2N5667 V(BR)CER 250 400 Vdc Emitter-Base Breakdown Voltage IE = 10μAdc V(BR)EBO 6.0 Vdc Collector-Emitter Cutoff Current VCE = 200Vdc VCE = 300Vdc 2N5664, 2N5666 2N5665, 2N5667 ICES 0.2 0.2 μAdc Collector-Base Cutoff Current VCB = 200Vdc VCB = 250Vdc 2N5664, 2N5666 0.1 1.0 μAdc mAdc VCB = 300Vdc VCB = 400Vdc 2N5665, 2N5667 ICBO 0.1 1.0 μAdc mAdc TO-66 (TO-213AA) 2N5664, 2N5665 TO-5 2N5666, 2N5667 TO-39 (TO-205AD) 2N5666S, 2N5667S U-3 2N5666U3 |
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