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STB4N62K3 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB4N62K3
Description  N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB4N62K3 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
April 2012
Doc ID 18337 Rev 2
1/18
18
STB4N62K3,
STD4N62K3
N-channel 620 V, 1.7
Ω, 3.8 A SuperMESH3™ Power MOSFET
in D2PAK and DPAK packages
Datasheet — production data
Features
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
■ Switching applications
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Figure 1.
Internal schematic diagram
Order codes
VDSS RDS(on) max
ID
Pw
STB4N62K3
STD4N62K3
620 V
< 2
Ω
3.8 A
70 W
D²PAK
DPAK
1
3
TAB
1
3
TAB
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB4N62K3
STD4N62K3
4N62K3
D²PAK
DPAK
Tape and reel
www.st.com


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