STB4N62K3 datasheet(4/18 Pages) STMICROELECTRONICS

Part #	STB4N62K3

Description	N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

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Electrical characteristics

STB4N62K3, STD4N62K3

4/18

Doc ID 18337 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

620

V

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 620V

1

µA

VGS = 0

VDS = 620V, TC=125 °C

50

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3

3.75

4.5

V

RDS(on

Static drain-source on-

resistance

VGS = 10 V, ID = 1.9 A

1.7

2

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

550

42

7

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS = 0 to 496 V, VGS = 0

-

27

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

2

5

10

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 496 V, ID = 3.8 A,

VGS = 10 V

(see Figure 18)

-

22

4

13

-

nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 300 V, ID = 1.9 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17)

-

10

9

29

19

-

ns

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