Zener Diodes

1

Publication date: March 2004

SKE00007CED

Silicon planar type

For stabilization of power supply

■ Features

• Extremely low noise voltage caused from the diode (2.4 V to

39V, 1/3 to 1/10 of our conventional MAZ3xxx series)

• Extremely good rising performance (in the low-current range)

• Easy-to-select the optimum diode because of their finely divided

zener-voltage ranks

• Guaranteed reliability, equivalent to that of conventional products

(Mini type package)

• Allowing to reduce the mounting area, thickness and weight

substantially, compared with those of the conventional products

• Allowing both reflow and flow mode of automatic soldering

• Allowing automatic mounting by an existing chip mounter

■ Absolute Maximum Ratings T

Unit: mm

Parameter

Symbol

Rating

Unit

Repetitive peak forward current

200

mA

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

■ Common Electrical Characteristics T

a

1: Anode

2: Cathode

EIAJ: SC-76

SMini2-F1 Package

Marking Symbol

Refer to the list of the electrical

characteristics within part numbers

(Example) MAZ8082: 8_2 or 8-2 or 8^2

5˚

0.16

1

2

+0.1

–0.06

0 to 0.1

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

0.9

1.0

V

2

Specified value

V

Zener rise operating resistance

Specified value

Ω

Zener operating resistance

Specified value

Ω

Reverse current

Specified value

µA

3

Specified value

mV/

°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 5 MHz.

= 25°C to 150°C

Refer to the list of the

electrical characteristics

within part numbers

Note) The part number in the parenthesis shows conventional part number.

This product complies with the RoHS Directive (EU 2002/95/EC).