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T1625T-8I Datasheet(PDF) 2 Page - STMicroelectronics |
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T1625T-8I Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 10 page Characteristics T1625T-8I 2/10 Doc ID 022069 Rev 2 1 Characteristics Table 2. Absolute maximum rating (Tj = 25 °C, unless otherwise specified) Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) Tc = 108 °C 16 A Tc = 119 °C 12 ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz tp = 20 ms 120 A F = 60 Hz tp = 16.7 ms 126 I²tI²t Value for fusing tp = 10 ms 95 A²s VDRM, VRRM Repetitive peak off-state voltage, gate open Tj = 150 °C 600 V Tj = 125 °C 800 VDSM, VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C 900 V dI/dt Critical rate of rise of on-state current IG = 2 x IGT F = 100 Hz 100 A/µs IGM Peak gate current tp = 20 µs Tj = 150 °C 4 A PG(AV) Average gate power dissipation Tj = 150 °C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range -40 to +150 -40 to +150 °C TL Lead temperature for soldering during 10 s (at 4 mm from case for TO220AB-ins.) 260 °C Vins (rms) Insulation rms voltage, 1 minute, TO220AB ceramic insulated 2500 V |
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