©2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

H11F1M, H11F2M, H11F3M Rev. 1.0.5

2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Device

Value

Units

TOTAL DEVICE

Storage Temperature

All

-40 to +150

°C

Operating Temperature

All

-40 to +100

°C

Lead Solder Temperature

All

260 for 10 sec

°C

EMITTER

Continuous Forward Current

All

60

mA

Reverse Voltage

All

5

V

Forward Current – Peak (10µs pulse, 1% duty cycle)

All

1

A

LED Power Dissipation 25°C Ambient

All

100

mW

Derate Linearly from 25°C

1.33

mW/°C

DETECTOR

Detector Power Dissipation @ 25°C

All

300

mW

Derate linearly from 25°C

4.0

mW/°C

Breakdown Voltage (either polarity)

H11F1M,

H11F2M

±30

V

H11F3M

±15

V

Continuous Detector Current (either polarity)

All

±100

mA